IRIS – Fast RFIC Passive Extraction

Xpeedic IRIS provides RFIC designers a 3D fast EM simulation tool integrated in Cadence Virtuoso design flow. The fast 3D method of moments solver with both multi-core and distributed parallelization greatly reduces the EM simulation time thus improves the design efficiency. The seamless integration with Virtuoso not only enables designers to stay in the Cadence design environment to perform the EM simulation which avoids the manual and error-prone layout data conversion, but also realizes the perfect convergence to front-end for design verification by automatic back-annotation. This design flow will greatly help RF IC designers to reduce the design cycles and achieve first-pass silicon success.

FEATURES
Design Environment

IRIS RFIC design flow is seamlessly integrated in Cadence Virtuoso platform, which enables the RFIC designers to complete the front end and back end design in the same environment.

Constraint Driven

IRIS Software employs the Cadence Virtuoso Constraint Manager to manager all elements (iCell) that need to be analyzed.

Mesh and 3D View

IRIS customized mesh handles complicated structures with advanced geometry healing and automatic via defeaturing. Users can also view the mesh and 3D module of iCell.

Fast 3D EM Solver and Parallel Processing Technique

IRIS EM solver takes into account all of the EM phenomena including conductor skin effect, proximity effect and substrate loss. The multi-core and distributed parallel computing techniques significantly reduce the simulation time.

Waveform Display

Waveform viewer shows result curves from EM simulation. The template function enables user to plot the preset character curves by one click.

Back Annotation

IRIS Back annotation enables users to export the extracted n-port models into IRIS schematic view by simple click and then to implement the hierarchical simulation, which allows users to run a quick what-if analysis.

Current Density Display

The display of current density enables users to review the current distribution of simulated device and provides physical insight of EM interaction at the desired frequencies.