Date: October 24, 2019
Place: Shanghai, China
As a valuable GLOBALFOUNDRIES RFwave and FDXcelerator program partner, Xpeedic Technology will showcase its latest solutions at GTC China 2019 (GLOBALFOUNDRIES Technology Conference) in Shanghai, China, October 24, 2019.
Featured as in-booth demos will include
A Complete EM Simulation Suite for On-Chip Passives in GF's Advanced Nodes
As Moore's Law continues scaling and 5G moves to high frequencies including millimeter wave, EM simulation is required to be three dimensional and full-wave, accurate from DC to THz. IRIS is the state-of-the-art EM simulation technology tailored to advanced process nodes. It has been certified by GLOBALFOUNDRIES FD-SOI 22FDX and FinFET 12LP Process widely adopted by fabless design companies.
Integrated Passive Device Technology for RF Front End Design
IPD is a core technology to achieve highly integrated RF front-end modules. Utilizing high-resistance silicon and thick copper processes, IPD has both consistency and high integration of semiconductor process, and good RF performance similar to traditional thick film processes such as LTCC. With its unique IPD design methodology and flow, Xpeedic has developed a series of filters, duplexers, couplers, power dividers and other devices, which are ready to be used in antenna switch modules, power amplifier modules and other RF front-end modules.
IPD-enabled System-in-Package for Integrated System
SiP technology can integrate multiple chips of different processes (Silicon, SOI, GaAs, etc.) and different functions (digital, analog, RF, etc.) into one package, achieving the advantages of miniaturization, high performance and low cost. Xpeedic can integrate its unique IPD into SiP and achieve even higher integration. Thanks to its differentiating EDA tools, dedicated IPD/SiP design teams, wafer and packaging partners, the company is able to provide customers with one-stop SiP solutions and services.